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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer
Author(s) -
Dmowski L. H.,
Konczewicz L.,
Suski T.,
Contreras S.,
Lu H.,
Schaff W. J.
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200508
Subject(s) - thermal conduction , hydrostatic pressure , materials science , condensed matter physics , electrical resistivity and conductivity , conductivity , polarity (international relations) , epitaxy , hydrostatic equilibrium , optoelectronics , chemistry , physics , nanotechnology , thermodynamics , composite material , biochemistry , layer (electronics) , quantum mechanics , cell
The importance of multicarrier contributions to electrical conductivity in epitaxial InN layered structures has been debated for last few years. In this work hydrostatic pressure was used to verify multicarrier conduction in nominally undoped InN layers with In‐growth polarity. To distinguish between different types of carriers the mobility spectrum analysis was applied, based on conductivity tensor components σ xx and σ xy measured as a function of magnetic field. Different contributions to the electric conduction (including the surprising presence of holes) and their evolution with pressure have been shown.