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Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators
Author(s) -
Laguta V. V.,
Nikl M.
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200502
Subject(s) - yttrium , electron paramagnetic resonance , crystallographic defect , oxide , scintillator , materials science , electron , ion , trapping , charge (physics) , charge carrier , crystal (programming language) , lutetium , chemistry , nuclear magnetic resonance , crystallography , physics , optoelectronics , nuclear physics , metallurgy , organic chemistry , quantum mechanics , detector , computer science , optics , biology , ecology , programming language
In the family of application‐important complex, oxide single crystal scintillators based on tungstates, aluminum perovskites, and yttrium (lutetium) orthosilicates, selected results of electron spin resonance study are presented. They are focused on various point defects, which participate in the processes of charge carriers transfer and capture. Particular attention is paid to the most natural defects inevitably present in oxide materials such as anion and cation vacancies, antisite defects, self‐trapped electron, and hole states. Current understanding of the nature of such charge trapping states and mechanisms of their creation in the selected oxide scintillation materials are discussed as well.