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Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb)
Author(s) -
Güngerich M.,
Sander T.,
Heiliger C.,
Czerner M.,
Klar P. J.
Publication year - 2013
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200458
Subject(s) - ternary operation , raman spectroscopy , hydrostatic pressure , nitride , atom (system on chip) , density functional theory , phonon , molecular vibration , materials science , gallium nitride , k nearest neighbors algorithm , chemistry , molecular physics , condensed matter physics , crystallography , computational chemistry , physics , nanotechnology , thermodynamics , optics , layer (electronics) , artificial intelligence , computer science , embedded system , programming language
We study the hydrostatic pressure response of the local environment of N in the ternary dilute nitride alloys, i.e ., GaN 0.021 P 0.979 , GaN 0.085 As 0.915 , and GaN 0.015 Sb 0.985 by Raman spectroscopy and density functional theory (DFT) of the local vibrational mode (LVM) of N. In all samples studied N is surrounded by four Ga atoms. To a first approximation the N vibrational mode can be described by the N‐atom vibrating in a rigid cage formed by the four Ga nearest neighbors. However, our careful experimental and theoretical analysis reveals that, despite the same nearest neighbor environment of N in the three dilute nitride hosts under study, distinct differences between the pressure dependence of the corresponding local N‐vibrational modes remain. These differences are rather due to the different chemical identities of the anions of the host than due to differences in N content and strain. Furthermore, it is shown that the LVM of N in the three alloys behaves differently under hydrostatic pressure than the optical extended phonon modes of zincblende GaN.