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Fast and scalable memory characteristics of Ge‐doped SbTe phase change materials
Author(s) -
Cheong Byungki,
Lee Suyoun,
Jeong Jeunghyun,
Park Sohee,
Han Seungwu,
Wu Zhe,
Ahn DongHo
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200419
Subject(s) - phase change memory , scalability , materials science , doping , microstructure , computer science , phase (matter) , phase change , premise , nanotechnology , optoelectronics , engineering physics , composite material , chemistry , physics , linguistics , organic chemistry , layer (electronics) , database , philosophy
Phase change memory (PCM) has opportunities of various applications on the premise of its high performance operations, which are still to develop with innovations such as change of a memory material. In respects of high‐speed and high‐scalability memory characteristics, δ‐phase Ge‐doped SbTe (GeST) materials stand as highly promising candidates. An overview of the material and device characteristics of these materials is presented primarily based on our recent experimental and computational studies and with a particular regard to their Sb‐to‐Te ratio (STR) dependence. TEM images of the δ‐phase GeST microstructures of varying STR and a highly scaled PCM cell with a δ‐phase GeST of high STR.