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Nanostructure–property relations for phase‐change random access memory (PCRAM) line cells
Author(s) -
Kooi B.J.,
Oosthoek J.L.M.,
Verheijen M.A.,
Kaiser M.,
Jedema F.J.,
Gravesteijn D.J.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200371
Subject(s) - electromigration , materials science , amorphous solid , phase change memory , characterization (materials science) , limiting , reliability (semiconductor) , random access memory , line (geometry) , nanostructure , optoelectronics , random access , nanotechnology , engineering physics , computer science , mechanical engineering , composite material , engineering , physics , mathematics , crystallography , chemistry , power (physics) , geometry , layer (electronics) , quantum mechanics , computer hardware , operating system
Phase‐change random access memory (PCRAM) cells have been studied extensively using electrical characterization and rather limited by detailed structure characterization. The combination of these two characterization techniques has hardly been exploited and it is the focus of the present work. Particularly, for improving the reliability of PCRAM such combined studies can be considered indispensable. Here, we show results for PCRAM line cells after series of voltage pulses with increasing magnitude are applied, leading to the first minimum sized amorphous mark, maximum amorphous resistance and over‐programming, respectively. Furthermore, the crucial effect of electromigration limiting the endurance (cyclability) of the cells is demonstrated.