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Role of potential fluctuations in phase‐change GST memory devices
Author(s) -
Agarwal Satish C.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200362
Subject(s) - chalcogenide , phase change memory , materials science , semiconductor , range (aeronautics) , phase change , phase (matter) , germanium compounds , nanotechnology , optoelectronics , condensed matter physics , chemical physics , germanium , engineering physics , chemistry , physics , composite material , organic chemistry , layer (electronics) , silicon
The long range potential fluctuations (LRPFs) arising from the defects and heterogeneities in disordered semiconductors are important for understanding their atomic and electronic properties. Here, they are measured in Ge X Sb Y Te 1− X − Y (GST) chalcogenide glasses used in rewritable phase change memory (PCM) devices. It is found that the most commonly used composition Ge 2 Sb 2 Te 5 has the smallest LRPF amongst its nearby compositions. This finding may be useful in the search for better PCM materials.