Premium
Characterization of Ge 2 Sb 2 Te 5 thin film alloys using conductive‐tip atomic force microscopy
Author(s) -
Chang Chia Min,
Liu Yen Ju,
Tseng Ming Lun,
Chu NienNan,
Huang DingWei,
Mansuripur Masud,
Tsai Din Ping
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200356
Subject(s) - conductive atomic force microscopy , materials science , characterization (materials science) , atomic force microscopy , electrical conductor , thin film , electrical resistivity and conductivity , photoconductive atomic force microscopy , microscopy , optoelectronics , nanotechnology , optics , composite material , scanning electron microscope , scanning capacitance microscopy , scanning confocal electron microscopy , engineering , electrical engineering , physics
Conductive‐tip atomic force microscopy (C‐AFM) is a powerful tool for investigating the electrical characteristics of phase‐change materials commonly used for electronic and optical data storage. We demonstrate the usefulness of this technique by examining the electrical conductivity of crystalline marks recorded with a focused laser pulse on a thin Ge 2 Sb 2 Te 5 film.