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Growth and characterization of thin Si–C films in RF plasma and optical emission spectroscopy
Author(s) -
Kurcz Magdalena,
Huczko Andrzej
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201200078
Subject(s) - tetramethylsilane , thin film , materials science , carbon film , deposition (geology) , plasma , spectroscopy , methane , analytical chemistry (journal) , characterization (materials science) , radio frequency , chemistry , nanotechnology , computer science , environmental chemistry , physics , organic chemistry , paleontology , quantum mechanics , sediment , biology , telecommunications
Radio frequency (RF; 13.56 MHz), non‐equilibrium low‐pressure plasma is a robust environment well suited for the deposition of thin films. The parametric research has been carried out in a novel system on the formation of SiC‐related thin films resulting from the decomposition of tetramethylsilane TMS, Si(CH 3 ) 4 . The films were deposited under various conditions to determine the effects of process parameters on both deposition and quality of the films. Carbonaceous thin films (methane CH 4 was used as a precursor) were deposited too, to prove broad applicability of RF plasma. Optical emission spectroscopy helped to better understand the chemical transformation of starting reactants.