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Front Cover: The role of interfaces in organic spin valves revealed through spectroscopic and transport measurements (Phys. Status Solidi B 1/2012)
Author(s) -
Drew Alan J.,
Szulczewski Gregory,
Nuccio Laura,
Gillin William P.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201190039
Subject(s) - spin valve , organic semiconductor , spin (aerodynamics) , materials science , optoelectronics , electron , magnetoresistance , transistor , diode , condensed matter physics , ferromagnetism , cover (algebra) , engineering physics , magnetic field , voltage , electrical engineering , physics , engineering , mechanical engineering , quantum mechanics
The transfer of electrons across the interface between inorganic and organic materials is critical to the performance of organic light emitting diodes, field effect transistors, and photovoltaic devices. In their Feature Article on pp. 9–17 , Drew et al. summarize experimental results that have advanced our understanding of spin‐polarized charge carrier transfer across ferromagnetic metal/organic semiconductor interfaces. The authors highlight key spectroscopic studies that have revealed insights into the nature of the electronic structure, in particular between Alq 3 and Co and Fe surfaces. They discuss the relationship between energy level diagrams for these systems and transport measurements made on spin‐valve devices. The cover picture shows that the insertion of a LiF layer at the interface between a ferromagnetic electrode and the organic semiconductor in an organic spin valve can change the probability of extracting spin minority or spin majority carriers, due to a shift in the vacuum level.