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Back Cover: Significantly different contamination of atomically clean Si(001) when investigated by XPS and AES (Phys. Status Solidi B 8/2011)
Author(s) -
Gheorghe Nicoleta G.,
Lungu George A.,
Costescu Ruxandra M.,
Teodorescu Cristian M.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201190024
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , low energy electron diffraction , in situ , analytical chemistry (journal) , contamination , electron diffraction , reflection high energy electron diffraction , scanning tunneling microscope , materials science , chemistry , nanotechnology , diffraction , physics , optics , environmental chemistry , nuclear magnetic resonance , ecology , nuclear physics , biology , organic chemistry
Recently, the c (4 × 2) reconstruction of the technologically highly important Si(001) surface was evidenced at low temperatures (below 200 K). High‐resolution X‐ray photoelectron spectroscopy (XPS) revealed a wide variety of surface states, whereas a study by scanning tunneling microscopy (STM) of the in situ oxidation in ultrahigh vacuum (UHV) revealed the high reactivity of the step edges. However, to date no in situ survey of the contamination of ultraclean Si(001) was published by using the standard methods in surface science: XPS and Auger electron spectroscopy (AES), although it was recognised that the electron beam may strongly affect the surface reconstruction in low energy electron diffraction (LEED) experiments. Teodorescu et al. ( pp. 1919–1924 ) present a comparative survey of the in situ contamination of atomically clean Si(001) followed by AES and XPS. The cover images show LEED patterns obtained for clean Si(001) immediately after preparation (top row) and after a 6‐hours investigation by AES and a short RHEED analysis (bottom row).