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Front Cover: Physics of nitride‐based nanostructured light‐emitting devices (Phys. Status Solidi B 8/2011)
Author(s) -
Hommel D.,
Gutowski J.,
Jahnke F.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201190023
Subject(s) - light emitting diode , materials science , epitaxy , optoelectronics , nitride , quantum dot , quantum graph , quantum well , electron , physics , condensed matter physics , optics , nanotechnology , quantum , quantum mechanics , layer (electronics) , laser
In a series of 12 articles, the physics of nitride‐based nanostructured light‐emitting devices is presented in this issue. Some of the topics are illustrated on the cover: The use of a tight‐binding model in combination with many‐particle methods to calculate absorption and gain spectra of nitridebased quantum‐dot (QD) systems is discussed by Seebeck et al. ( pp. 1871–1878 ), one illustration of their results is the non‐parabolic dispersion of electrons in an InGaN wetting layer (upper left graph). The surface morphology of GaN and InGaN layers, shown in the upper right graph, is the topic of the article by Falta et al. ( pp. 1800–1809 ). Figge et al. ( pp. 1765–1776 ) report on the realization of InGaN QD based LEDs for operation from the blue to amber spectral region (picture on the lower left). Furthermore, the creation of monolithic GaN‐based airpost pillar microcavities (MCs) with embedded InGaN QDs is discussed (lower right graph) with respect to their epitaxial fabrication (Kruse et al., pp. 1748–1755 ) and their optical properties (Sebald et al., pp. 1756–1764 ). The detected mode spectra are compared with calculations by Florian et al. ( pp. 1867–1870 ).