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Effect of defects in ferromagnetic C doped ZnO thin films
Author(s) -
Subramanian Munisamy,
Akaike Yuhei,
Hayashi Yasuhiko,
Tanemura Masaki,
Ebisu Hiroshi,
Ping Daniel Lau Shu
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147609
Subject(s) - ferromagnetism , doping , materials science , zinc , condensed matter physics , oxygen , thin film , atomic orbital , nanotechnology , electron , optoelectronics , chemistry , metallurgy , physics , organic chemistry , quantum mechanics
Abstract The present work investigates the relation between ferromagnetism and intrinsic defects of C‐doped ZnO thin films. The room‐temperature ferromagnetism (RTFM) in C‐doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long‐range magnetic interaction in C‐doped ZnO is due to carbon–carbon interaction mediated by oxygen. The oxygen‐ and zinc‐related defects in C‐doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.