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The influence of the Rashba interaction on spin accumulation and spin current of semiconductor based finite width quantum rings
Author(s) -
Nikipar S.,
Bourkheili S. Hassanpour,
Phirouznia A.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147599
Subject(s) - condensed matter physics , physics , spin (aerodynamics) , rashba effect , magnetization , spin hall effect , spinplasmonics , coupling (piping) , magnetic field , electron , spin–orbit interaction , perpendicular , spin polarization , spintronics , quantum mechanics , ferromagnetism , materials science , geometry , mathematics , metallurgy , thermodynamics
Spin current and spin accumulation of a finite width quantum ring (QR) in the presence of a homogeneous perpendicular magnetic field and Rashba spin‐orbit coupling have been investigated. A non‐equilibrium Green's function (NEGF) approach has been followed in coherent regime. Numerical results show that spatial magnetization of the transport electrons oscillates throughout the QR and the spin current and spin accumulation can be controlled by the Rashba coupling, bias voltage, and magnetic field.