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Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
Author(s) -
Tiras E.,
Tanisli M.,
Balkan N.,
Ardali S.,
Iliopoulos E.,
Georgakilas A.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147500
Subject(s) - raman spectroscopy , effective mass (spring–mass system) , infrared , molecular beam epitaxy , plasmon , analytical chemistry (journal) , electron density , raman scattering , electron , materials science , chemistry , infrared spectroscopy , molecular vibration , molecular physics , atomic physics , optics , epitaxy , optoelectronics , physics , nanotechnology , layer (electronics) , organic chemistry , quantum mechanics , chromatography
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532 nm (2.33 eV) line of laser was used as the excitation source. Lower branch (L − ) of the longitudinal‐optic‐phonon‐plasmon‐coupled (LOPC) mode at ∼430 cm −1 was too weak to be observed clearly in Raman measurements. It was however, strong in the IR spectra. A strong A 1 (LO) mode was also observed in Raman measurements and this mode together with the L − mode were used to calculate the electron effective mass in InN as a function of carrier density. In the theoretical calculation we used both the Drude and Linhard–Mermin models and obtained the electron effective mass in the range between 0.07 and 0.167m 0 with increasing electron density from 0.79 to 2.8 × 10 19 cm −3 .