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Critical scattering in the vicinity of the metal–insulator transition in Mn‐doped GaAs
Author(s) -
Varpula A.,
Novikov S.,
Kuivalainen P.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147460
Subject(s) - condensed matter physics , ferromagnetism , scattering , doping , weak localization , spins , metal–insulator transition , semiconductor , magnetic semiconductor , electrical resistivity and conductivity , formalism (music) , scaling , materials science , magnetic field , physics , magnetoresistance , quantum mechanics , optoelectronics , art , musical , geometry , mathematics , visual arts
We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo–Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self‐consistent Born approximation. The model explains well the measured resistivity in Mn‐doped GaAs as a function of temperature, doping concentration, and magnetic field.