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Quantification of impurity concentration in Cu 2 O and CuO via secondary ion mass spectrometry
Author(s) -
Laufer Andreas,
Reppin Daniel,
Metelmann Hauke,
Geburt Sebastian,
Ronning Carsten,
Leichtweiss Thomas,
Janek Jürgen,
Meyer Bruno K.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147407
Subject(s) - impurity , analytical chemistry (journal) , sputtering , secondary ion mass spectrometry , ion , mass spectrometry , copper , chemistry , stoichiometry , materials science , thin film , metallurgy , nanotechnology , organic chemistry , chromatography
Secondary ion mass spectrometry (SIMS) is a technically matured analysis technique for the investigation of depth and lateral distributions in solids. The “raw data” of a SIMS measurement provides only qualitative information. For quantification so‐called relative sensitivity factors (RSF) are mandatory. To our knowledge no RSFs have been determined for Cu 2 O and CuO so far. In this work the RSFs for 21 elements in Cu 2 O and 14 elements in CuO have been determined via ion implanted standards. For the RSF determination we present the plateau method (Section 3) for box‐like implantation profiles. This method provides a lower uncertainty in RSF value compared to the obtained uncertainty using single implantation profiles. In addition, we have estimated the electron affinities of NO 2 , AsO 2 and SbO to 0.55, 2.7 and 2.85 eV, respectively. Unexpectedly, we observe for Cu 2 O and CuO nearly identical RSF values. This behaviour cannot be attributed to a change in chemical composition caused by the SIMS sputter process. Furthermore, the calculated RSFs have been used to determine the impurity concentrations of our sputtered copper oxide thin films.