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Hybrid photovoltaic cells based on ZnO/Sb 2 S 3 /P3HT heterojunctions
Author(s) -
Liu C. P.,
Wang H. E.,
Ng T. W.,
Chen Z. H.,
Zhang W. F.,
Yan C.,
Tang Y. B.,
Bello I.,
Martinu L.,
Zhang W. J.,
Jha S. K.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147393
Subject(s) - heterojunction , materials science , x ray photoelectron spectroscopy , annealing (glass) , crystallinity , indium tin oxide , antimony , indium , optoelectronics , zinc , oxide , absorption (acoustics) , chemical engineering , thin film , nanotechnology , composite material , metallurgy , engineering
We demonstrate hybrid photovoltaic (PV) cells based on n–i–p heterojunctions with incorporated zinc oxide (ZnO) films using a sol–gel method. The cells, employing stibnite (Sb 2 S 3 ), and poly(3‐hexylthiophene) (P3HT) materials, as light absorption layers, constitute an active region in the indium tin oxide (ITO)/ZnO(n)/Sb 2 S 3 (i)/P3HT(p)/Ag hybrid structure. Our investigation shows that annealing temperature has a significant effect on both the crystallinity and optical absorption of Sb 2 S 3 films. The near‐intrinsic Sb 2 S 3 films annealed at 300 °C exhibits dark conductivity of 1.42 × 10 −7 S cm −1 . The performance of PV cells strongly depends on thermal treatment of Sb 2 S 3 , and on the thickness of both the Sb 2 S 3 and P3HT layers. Electronic structures of annealed Sb 2 S 3 films was further studied by photoelectron spectroscopy to understand the physics behind.