Premium
Photoluminescence evaluation of the quality of Cd 0.9 Zn 0.1 Te detectors doped with different indium concentrations
Author(s) -
Naseka Yu.,
Strilchuk O.,
Komar V.,
Terzin I.,
Sulima S.,
Bryleva K.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147360
Subject(s) - photoluminescence , acceptor , exciton , doping , indium , analytical chemistry (journal) , materials science , binding energy , phonon , range (aeronautics) , atomic physics , chemistry , optoelectronics , condensed matter physics , physics , chromatography , composite material
With the aim to determine an optimal indium (In) concentration in Cd 0.9 Zn 0.1 Te:In nuclear radiation detectors for a good material quality, low‐temperature photoluminescence (LTPL) measurements have been performed at 5 K in the energy range of 1.2–1.7 eV. The LTPL spectrum of initial sample contained a neutral acceptor bound exciton (A 0 X) peak at 1.635 eV, donor–acceptor pair (DAP) peak at 1.606 eV with its 1LO phonon replica, and deep‐level defects (D) peak at 1.455 eV. In doping leads to the appearance of a new relatively intensive peak at 1.652 eV that is caused by a shallow neutral donor bound exciton (D 0 X) due to In substituting cadmium vacancies (V Cd ). At In concentrations of about 8 × 10 16 –10 17 cm −3 the value of $I_{{\rm D}^{{\rm 0}} {\rm X}} /I_{{\rm D}} $ ratio is maximal, which indicates a low density of detrimental carrier traps and, therefore, high‐material quality. We believe that at such concentrations the majority of as‐grown Cd vacancies will be substituted by In atoms and, therefore, noted concentrations are optimal, which was confirmed by the correlation with mobility–lifetime product.