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Surface phonon polariton characteristics of wurtzite ZnO thin film grown on silicon substrate
Author(s) -
Ng Sha Shiong,
Ooi Poh Kok,
Lee Sai Cheong,
Abdullah Mat Johar,
Hassan Zainuriah,
Hassan Haslan Abu
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147337
Subject(s) - wurtzite crystal structure , polariton , surface phonon , phonon , materials science , substrate (aquarium) , anisotropy , silicon , thin film , dispersion (optics) , optoelectronics , transfer matrix method (optics) , condensed matter physics , layer (electronics) , reflection (computer programming) , optics , nanotechnology , zinc , physics , oceanography , geology , metallurgy , computer science , programming language
In this work, p‐polarized far infrared attenuated total reflection (ATR) with Otto configuration technique is employed to study the surface phonon polariton (SPP) characteristics of wurtzite ZnO thin film grown on Si(111) substrate. One prominent dip corresponding to the leaky SPP mode of the ZnO is detected at 532 cm −1 . The obtained result is in good agreement with the calculated ATR spectrum simulated based on the transfer matrix formulation. The origin of the observed dip is verified with the surface polariton dispersion curves based on a three anisotropic layer model (air–ZnO–Si). The results also reveal that the real SPP and the interface phonon polariton modes for this studied structure are barely observable experimentally.