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Electric‐field‐induced optical absorption and refractive‐index changes of a shallow hydrogenic impurity in an InAs/GaAs quantum wire
Author(s) -
Arunachalam N.,
Peter A. J.,
Yoo C. K.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147328
Subject(s) - electric field , refractive index , photoionization , excited state , atomic physics , photon energy , absorption (acoustics) , photon , condensed matter physics , chemistry , physics , ionization , optics , organic chemistry , ion , quantum mechanics
The effect of electric‐field strength on the binding energy of a hydrogenic impurity in an InAs/GaAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a single‐band effective‐mass approximation. The electric‐field‐induced photoionization cross section of the hydrogenic impurity is investigated. The total optical absorption and the refractive‐index changes as a function of normalized photon energy between the ground and the first excited state under the influence of an electric field are analyzed. The optical absorption coefficients and the refractive‐index changes strongly depend on the incident optical intensity and the electric‐field intensity.