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Ballistic transport through a semiconducting magnetic nanocontact in the presence of Rashba and Dresselhaus spin–orbit interactions
Author(s) -
Fallahi V.,
Ghanaatshoar M.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147284
Subject(s) - condensed matter physics , asymmetry , ferromagnetism , magnetoresistance , spin–orbit interaction , ballistic conduction , physics , fermi gas , electron , rashba effect , materials science , magnetic field , spintronics , quantum mechanics
We study the magnetoresistance (MR) of a one‐dimensional electron gas in a ferromagnetic semiconducting nanocontact containing an atomic‐size domain wall, and in the presence of the Rashba and the Dresselhaus spin–orbit interactions. The MR is calculated in the ballistic regime, within the Landauer–Büttiker formalism. It is shown that, the Dresselhaus spin–orbit interaction which is the result of bulk‐induced inversion asymmetry makes a reduction in the domain wall MR. In contrast, the Rashba coupling may lead to a negative or positive change in the domain wall MR, depending on the Fermi energy and the lateral confinement potentials which can be induced by both parabolic lateral confinement and lateral gate potentials.