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Carrier‐density dependence of the hole mobility in doped and undoped regioregular poly(3‐hexylthiophene)
Author(s) -
Brondijk Jakob J.,
Maddalena Francesco,
Asadi Kamal,
van Leijen Herman J.,
Heeney Martin,
Blom Paul W. M.,
de Leeuw Dago M.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147266
Subject(s) - materials science , doping , electron mobility , charge carrier density , diode , optoelectronics , schottky diode , range (aeronautics) , transistor , electrical engineering , voltage , composite material , engineering
We investigate the mobility of poly(3‐hexylthiophene) (P3HT) over a carrier‐density range from 10 15 to 10 20 cm −3 . Hole‐only diodes were used for densities below 10 16 cm −3 and field‐effect transistors were used for carrier densities higher than 10 18 cm −3 . To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier‐density range.