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The field emission of Cu‐doped ZnO
Author(s) -
Ye Fan,
Cai XingMin,
Dai FuPing,
Jing ShouYong,
Zhang DongPing,
Fan Ping,
Liu LiJun
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147252
Subject(s) - field electron emission , materials science , doping , argon , sputter deposition , field (mathematics) , analytical chemistry (journal) , current density , oxygen , electron , sputtering , optoelectronics , thin film , nanotechnology , atomic physics , chemistry , physics , organic chemistry , quantum mechanics , chromatography , pure mathematics , mathematics
Cu‐doped ZnO films were deposited by direct current magnetron sputtering at room temperature in an atmosphere of argon and oxygen. The properties of Cu‐doped ZnO films were characterized and their field emission was studied. The field emission is related to the defect energy levels of Zn interstitials. Cu doping can weaken the field emission by reducing the number of Zn interstitials, deteriorating the crystalline quality and forming electron traps. The content of Cu has to be carefully controlled to achieve a field emission with a large current density and a low threshold voltage.