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Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well
Author(s) -
Duque C. A.,
MoraRamos M. E.,
Kasapoglu E.,
Sari H.,
Sökmen I.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147250
Subject(s) - exciton , quantum well , electric field , quantum confined stark effect , laser , photoluminescence , heterojunction , physics , condensed matter physics , floquet theory , biexciton , effective mass (spring–mass system) , field (mathematics) , stark effect , atomic physics , optoelectronics , quantum mechanics , mathematics , pure mathematics , nonlinear system
The effects of intense laser radiation on the exciton states in GaAs‐Ga 1– x Al x As quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton‐related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation.