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Electronic properties of Y‐junctions in SnO 2 nanowires
Author(s) -
Kar Ayan,
Stroscio Michael A.,
Dutta Mitra,
Meyyappan M.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147233
Subject(s) - nanowire , valence band , materials science , fermi level , x ray photoelectron spectroscopy , photoemission spectroscopy , condensed matter physics , branching (polymer chemistry) , nanotechnology , optoelectronics , band gap , physics , electron , nuclear magnetic resonance , quantum mechanics , composite material
Growth conditions leading to kinking and branching in SnO 2 nanowires have been investigated. Lower temperature growth at 750 °C leads to Y‐junctions as seen previously in carbon nanotubes, whereas straight nanowires are obtained at 880 °C. Photoemission valence band spectroscopy is used to show that the carrier concentration and Fermi level position vary with diameter. Thus, the stem and branches in a Y‐junction can have completely different semiconducting properties, leading to opportunities in novel device construction.