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InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition
Author(s) -
Figge Stephan,
Tessarek Christian,
Aschenbrenner Timo,
Hommel Detlef
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147165
Subject(s) - spinodal decomposition , quantum dot , spinodal , materials science , epitaxy , indium , molecular beam epitaxy , condensed matter physics , metalorganic vapour phase epitaxy , chemical physics , phase (matter) , nanotechnology , optoelectronics , chemistry , physics , layer (electronics) , organic chemistry
Most commonly used for the self‐assembling of InGaN quantum dots is a Stranski–Krastanov growth scheme. Often neglected is the influence of spinodal decomposition, although it is frequently discussed with quantum well growth. In this publication we will expose the influence of both mechanisms on the formation process of quantum dots. This paper gives an insight in the theoretical background of quantum dot formation and covers the growth by molecular beam epitaxy and metal organic vapor phase epitaxy. Stranski–Krastanov like growth has been verified by the surface evolution beyond the critical thickness as seen by atomic force microscopy on uncapped samples. The overgrowth of such samples led to dissolution of the quantum dots. Indium compositions within the miscibility gap below critical thickness yielded spinodal phase separation in meander like structures These structures are in agreement with the theory from Hilliard and Cahn. Based on spinodal decomposition overgrowth schemes have been developed which showed reliable quantum dot emission. Such layers have been implemented into device structures such as LEDs and laser structures.