Premium
Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities
Author(s) -
Florian M.,
Jahnke F.,
Pretorius A.,
Rosenauer A.,
Dartsch H.,
Kruse C.,
Hommel D.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147159
Subject(s) - pillar , materials science , vertical cavity surface emitting laser , transfer matrix method (optics) , layer (electronics) , optoelectronics , optics , laser , transmission (telecommunications) , transmission electron microscopy , nitride , composite material , nanotechnology , physics , engineering , electrical engineering , structural engineering
For vertical‐cavity surface‐emitting laser pillar microcavities with three‐dimensional optical mode confinement, we theoretically study the influence of growth imperfections on the cavity quality factor. Mode calculations based on a vectorial transfer‐matrix approach are used to simulate layer thickness fluctuations as well as a gradual variation of the layer thickness across the micropillar for an AlGaN/GaN material system. Experimental estimates for the layer thickness profile are obtained with transmission electron microscopy Z ‐contrast images.