Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities | Zendy

Florian M. | Zendy; Jahnke F. | Zendy; Pretorius A. | Zendy; Rosenauer A. | Zendy; Dartsch H. | Zendy; Kruse C. | Zendy; Hommel D. | Zendy

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Influence of growth imperfections on optical properties of nitride pillar VCSEL microcavities

Author(s) -

Florian M.,

Jahnke F.,

Pretorius A.,

Rosenauer A.,

Dartsch H.,

Kruse C.,

Hommel D.

Publication year - 2011

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201147159

Subject(s) - pillar , materials science , vertical cavity surface emitting laser , transfer matrix method (optics) , layer (electronics) , optoelectronics , optics , laser , transmission (telecommunications) , transmission electron microscopy , nitride , composite material , nanotechnology , physics , engineering , electrical engineering , structural engineering

For vertical‐cavity surface‐emitting laser pillar microcavities with three‐dimensional optical mode confinement, we theoretically study the influence of growth imperfections on the cavity quality factor. Mode calculations based on a vectorial transfer‐matrix approach are used to simulate layer thickness fluctuations as well as a gradual variation of the layer thickness across the micropillar for an AlGaN/GaN material system. Experimental estimates for the layer thickness profile are obtained with transmission electron microscopy Z ‐contrast images.

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