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Importance of strain for green emitters based on (In, Ga)N films of non‐polar orientation
Author(s) -
Ghosh Sandip,
Grahn Holger T.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201147011
Subject(s) - materials science , wurtzite crystal structure , lasing threshold , optoelectronics , laser , polarization (electrochemistry) , diode , polar , anisotropy , optics , wavelength , zinc , chemistry , physics , astronomy , metallurgy
Wurtzite In x Ga 1– x N films, with alloy compositions suitable for obtaining green‐light emitting diodes (LED) and lasers in the wavelength range between 520 and 550 nm, experience compressive anisotropic in‐plane strain when grown on non‐polar ( $1{\bar {1}}00$ ) oriented M ‐plane or ( $11{\bar {2}}0$ ) oriented A ‐plane GaN substrates. The results of calculations of the electronic band structure presented here demonstrate that this strain mixes the valence bands and modifies the emission polarization properties in such a way that lasing characteristics will benefit from it. The advantage improves with partial anisotropic strain relaxation. However, both lasing characteristics and light extraction out of a LED will deteriorate when such a film becomes fully relaxed.