Premium
Growth and spectroscopy of single lateral InGaAs/GaAs quantum dot molecules
Author(s) -
Heldmaier Matthias,
Hermannstädter Claus,
Witzany Marcus,
Wang Lijuan,
Peng Jie,
Rastelli Armando,
Bester Gabriel,
Schmidt Oliver G.,
Michler Peter
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100800
Subject(s) - photoluminescence , spectroscopy , quantum dot , materials science , molecular beam epitaxy , atomic force microscopy , microscopy , molecule , molecular physics , excitation , optoelectronics , nanotechnology , optics , epitaxy , physics , quantum mechanics , layer (electronics)
Laterally coupled quantum dot molecules (QDMs) were grown by molecular beam epitaxy. We describe the challenging growth process as well as morphological studies of the produced samples leading to a promising theoretical approach to describe the properties of the QDMs using a many‐body pseudopotential approach. Extensive spectroscopic measurements on these laterally coupled QDMs were performed. We prove the single quantum system nature of the considered QDMs by photon‐correlation measurements and analyze the photoluminescence (PL) and photoluminescence excitation (PLE) spectra under different aspects. The spectroscopic results are compared in detail to the performed theoretical calculations. Agreement between experiment and theory are presented, as well as, limitations of the model as indicated by most recent measurements.Atomic‐force microscopy (AFM) image of a lateral QDM.