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Quantum state tomography measurements on strain‐tuned In x Ga 1− x As/GaAs quantum dots
Author(s) -
Jöns K. D.,
Hafenbrak R.,
Atkinson P.,
Rastelli A.,
Schmidt O. G.,
Michler P.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100777
Subject(s) - quantum dot , exciton , photon , polarization (electrochemistry) , physics , condensed matter physics , density matrix , fine structure , quantum , strain (injury) , quantum state , quantum point contact , materials science , quantum well , molecular physics , optics , quantum mechanics , chemistry , laser , medicine
We present quantum state tomography (QST) measurements on strain‐tuned self‐assembled In x Ga 1− x As/GaAs quantum dots. By applying uniaxial stress we tune the fine structure splitting (FSS) of the exciton transition and investigate the change in the two‐photon polarization state (TPPS) of the quantum dot. We tune the FSS to a minimum value of 4.7 µeV. The density matrix of the TPPS indicates an onset of the anti‐crossing of the exciton transition. Our experiments show that strain‐tuning is a promising method for the generation of triggered polarization entangled photon pairs.