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Towards electrical detection of plasmons in all‐silicon pin‐diodes
Author(s) -
Fischer Inga A.,
Wu JyhLih,
Vogelgesang Ralf,
Schulze Jörg
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100774
Subject(s) - materials science , optoelectronics , photocurrent , diode , plasmon , silicon , passivation , surface plasmon , surface plasmon polariton , grating , semiconductor , optics , nanotechnology , physics , layer (electronics)
We investigate the possibility for optically exciting and electrically detecting surface plasmon polaritons (SPPs) in a set‐up fully compatible with complementary‐metal‐oxide‐semiconductor that consists of a silicon pin‐diode. A grating in the aluminum electrode of the pin‐diode is intended to enable the optical excitation of SPPs at the interface between the aluminum metallization and the SiO 2 ‐passivation of the diode. When the SPP propagates towards the pin‐diode and excites electron–hole pairs, it can be detected on the basis of the resulting photocurrent. We report on preliminary results obtained with scanning photocurrent microscopy with three different laser wavelengths (458, 512, and 633 nm).