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Site‐controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices
Author(s) -
Zhang Jianjun,
Rastelli Armando,
Schmidt Oliver G.,
Bauer Günther
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100771
Subject(s) - materials science , substrate (aquarium) , transistor , optoelectronics , tensile strain , field effect transistor , electron mobility , silicon , nanotechnology , ultimate tensile strength , electrical engineering , voltage , composite material , geology , engineering , oceanography
Deterministic control of position on a substrate, uniform size and shape are prerequisite for most of the envisioned applications of SiGe islands in electronic and optoelectronic devices. As an example of electronic application, tensile strained Si layers on top of coherent SiGe islands may be used as channels for field effect transistors (FETs) with enhanced electron mobility. For such a kind of application, site‐controlled islands are required to allow for their external addressability. In this feature article we investigate the morphological and compositional evolution of site‐controlled SiGe islands on pit‐patterned Si(001) substrates. We then report on the first demonstrated n‐channel FET with enhanced electron mobility based on SiGe islands. Finally, a new approach for further increase of the tensile strain is presented.