z-logo
Premium
Magnetotransport in organic Dirac fermion system at the quantum limit: Interlayer Hall effect and surface transport via helical edge states
Author(s) -
Osada Toshihito
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100587
Subject(s) - condensed matter physics , dirac fermion , quantum hall effect , magnetoresistance , physics , magnetic field , spin (aerodynamics) , quantum spin hall effect , hall effect , surface states , fermi surface , fermion , quantum mechanics , surface (topology) , superconductivity , geometry , mathematics , thermodynamics
We discuss two anomalous features of interlayer magnetotransport observed in α ‐(BEDT‐TTF) 2 I 3 in terms of massless Dirac fermions: the interlayer Hall effect and high‐field interlayer magnetoresistance (MR). The former is the anomalous Hall effect, which does not depend on magnetic field strength. It depends only on field orientation showing cot θ ‐type angle dependence. We have derived the lowest order contribution of interlayer coupling to conductivity and successfully reproduced the interlayer Hall effect as a transport phenomenon in the massless Dirac fermion system at the quantum limit. The latter is an exponential increase of interlayer MR and its follow‐on saturation in higher magnetic fields. The exponential increase is evidence of the existence of a mobility gap at the Fermi level. It strongly suggests that the ν  = 0 quantum Hall state is realized by spin splitting. In this case, two edge states with opposite spin and chirality are formed on the edge surface. The surface transport via edge states becomes dominant in interlayer transport in high enough fields, where bulk transport becomes exponentially small. The observed saturation of interlayer MR is well explained with this scenario.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here