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Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN
Author(s) -
Garrett Gregory A.,
Rotella Paul,
Shen Hongen,
Wraback Michael,
Haeger Daniel A.,
Chung Roy B.,
Pfaff Nathan,
Young Erin C.,
DenBaars Steven P.,
Speck James S.,
Cohen Daniel A.
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100528
Subject(s) - photoluminescence , materials science , ultraviolet , optoelectronics , active layer , radiative transfer , wide bandgap semiconductor , light emitting diode , diode , optics , layer (electronics) , nanotechnology , physics , thin film transistor
Active regions for mid‐ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time‐resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi‐polar ( $20{\bar {2}}1$ ) orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono‐exponential decays of around 500 ps and calculated radiative and non‐radiative lifetimes are compared to previously reported results for active regions on bulk m ‐plane GaN.