Premium
Strain relaxation in thick ( $1{\bar {1}}01$ ) InGaN grown on GaN/Si substrate
Author(s) -
Tanikawa Tomoyuki,
Honda Yoshio,
Yamaguchi Masahito,
Amano Hiroshi,
Sawaki Nobuhiko
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100445
Subject(s) - materials science , indium , coalescence (physics) , stacking , optoelectronics , stress relaxation , crystallography , condensed matter physics , composite material , chemistry , physics , creep , organic chemistry , astrobiology
We demonstrated the growth of thick InGaN on ( $1{\bar {1}}01$ ) GaN/Si. The InGaN layer showed a marked inclination along the 〈0001〉 projection direction. The InGaN with a higher indium composition showed a larger inclination. Owing to the lattice mismatch between InGaN and GaN, misfit dislocations and/or stacking faults are generated from the heterointerface, which resulted in a larger inclination. As the indium content increased, inclining was observed in the early stage of InGaN growth. After InGaN was substantially relaxed, the crystallinity was saturated or improved. The surface morphology also became roughened because of the strain relaxation to form triangular grains, and then recovered following the coalescence.