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An approach to temperature‐insensitive band gap – The InGaGdN case
Author(s) -
Emura Shuichi,
MohdTawil SitiNooraya,
Krishnamurthy Daivasigamani,
Asahi Hajime
Publication year - 2012
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100336
Subject(s) - photoluminescence , materials science , band gap , mixing (physics) , condensed matter physics , thermal expansion , quality (philosophy) , semiconductor , component (thermodynamics) , thermal , thermodynamics , physics , optoelectronics , quantum mechanics , metallurgy
Quaternary alloys InGaGdN with In content of 23% and 14% (Gd ≈ 1% in both) are successfully grown with a sufficient quality to investigate the temperature behavior of photoluminescence (PL). A temperature‐independent peak position is found for the sample with In content of 23%, while the sample with In content of 14% shows a weak temperature dependence. A theoretical model to explain the temperature dependence of the band gap of semiconductors is developed, where the inter‐band mixing and the inner stress caused by the difference of the thermal expansion among the component alloys are taken into account.