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High performance thin‐film transistors using moderately aligned semiconducting single‐wall carbon nanotubes
Author(s) -
Fujii Shunjiro,
Tanaka Takeshi,
Nishiyama Satoko,
Kataura Hiromichi
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201100254
Subject(s) - thin film transistor , materials science , carbon nanotube , transistor , semiconductor , solution process , optoelectronics , substrate (aquarium) , agarose , thin film , nanotechnology , layer (electronics) , chromatography , electrical engineering , chemistry , oceanography , engineering , voltage , geology
Abstract Thin‐film transistors (TFTs) using aligned network of semiconductor‐enriched single‐wall carbon nanotubes (s‐SWCNTs) were fabricated on a SiO 2 /Si substrate. The aligned thin film was prepared by N 2 blow in the drying process using as separated s‐SWCNT solution prepared by the agarose gel chromatography. We demonstrated that TFT using a moderately aligned s‐SWCNT thin film shows drastically improved transfer characteristics. The TFT simultaneously showed a mobility of 19.6 cm 2 /(V · s) and an on/off ratio of 1.7 × 10 5 , although the purity of semiconductor used in this work was not higher than 90%. Because the alignment process is very easy and effective, it is expected that moderately aligned s‐SWCNT film could be used to practical circuits made of s‐SWCNT TFTs.