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Microstructural characterization at the interface of Al 2 O 3 /ZnO/Al 2 O 3 thin films grown by atomic layer deposition
Author(s) -
Jang Yong Woon,
Bang Seokhwan,
Jeon Hyeongtag,
Lee Jeong Yong
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046551
Subject(s) - atomic layer deposition , materials science , annealing (glass) , transmission electron microscopy , epitaxy , analytical chemistry (journal) , thin film , spectroscopy , oxygen , layer (electronics) , deposition (geology) , nanotechnology , chemistry , metallurgy , paleontology , sediment , physics , organic chemistry , chromatography , quantum mechanics , biology
In this study, the effects of the annealing temperature and time on Al 2 O 3 /ZnO/Al 2 O 3 thin films grown by the atomic layer deposition (ALD) method were examined using transmission electron microscopy (TEM) and energy dispersion spectroscopy (EDS). Samples were annealed for 30 s at 600, 620, and 700 °C in a N 2 atmosphere, and other samples were annealed for 30 s, 5 min, and 10 min at 700 °C. The decrease in the thickness of ZnO showed a parabolic tendency at these temperature and time ranges, and ZnAl 2 O 4 was formed by the reaction between ZnO and Al 2 O 3 at 620 °C. Although the generated ZnAl 2 O 4 grains could not have strict epitaxial relations with the ZnO grains, the stain in the ZnAl 2 O 4 grains was considerably influenced by the orientation relation between ZnO and ZnAl 2 O 4 which was related to the oxygen rearrangement for the ZnAl 2 O 4 generation.