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The influence of Al content on impurity states in GaN/AlGaN asymmetrically coupled quantum dots
Author(s) -
Wang T. X.,
Li Y.,
Liu Y. M.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046506
Subject(s) - quantum dot , impurity , condensed matter physics , materials science , binding energy , zinc , shallow donor , optoelectronics , chemistry , atomic physics , physics , metallurgy , organic chemistry
We present a calculation of the donor impurity states in zinc‐blende (ZB) GaN/AlGaN asymmetrically coupled quantum dots (ACQDs). Numerical results show that the donor binding energy is distributed asymmetrically with respect to the center of the ACQDs for any Al composition. It is also found that for an impurity located inside a wide dot, the donor binding energy is insensitive to the middle barrier width ( L mb ≥ 3 nm) in ZB GaN/Al 0.15 Ga 0.85 N ACQDs. However, for an impurity located inside a narrow dot, the donor binding energy has a minimum value with increasing Al composition.