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Theoretical study of ion doping and substrate effects in antiferroelectric thin films
Author(s) -
Wesselinowa Julia M.,
Apostolov A. T.,
Trimper Steffen
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046464
Subject(s) - antiferroelectricity , doping , materials science , ion , condensed matter physics , thin film , polarization (electrochemistry) , phase transition , ferroelectricity , excitation , substrate (aquarium) , chemistry , nanotechnology , physics , optoelectronics , dielectric , oceanography , organic chemistry , quantum mechanics , geology
Antiferroelectric (AFE) thin films are studied under the influence of doping ions and the presence of substrates. Both induce a strong changing of the polarization and lead to a shift of the phase transition temperature. These effects can be understood within the Ising model in a transverse field with additional four spin interaction. To that aim different exchange interactions between the doping ions and the host ions as well as between the AFE thin film and the substrate are assumed. Using a Green's function technique the microscopic spectrum of the elementary excitation is calculated. From here we find that the transition temperature and the polarization is strongly influenced by the magnitude and the kind of stress, tensile or compressive. The competition between surface and substrate effects is discussed.