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Semi‐polar nitride surfaces and heterostructures
Author(s) -
Strittmatter André,
Northrup John E.,
Johnson Noble M.,
Kisin Mikhail V.,
Spiberg Philippe,
ElGhoroury Hussein,
Usikov Alexander,
Syrkin Alexander
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046422
Subject(s) - sapphire , epitaxy , heterojunction , materials science , optoelectronics , light emitting diode , polar , wide bandgap semiconductor , quantum well , nitride , metalorganic vapour phase epitaxy , polarization (electrochemistry) , wavelength , gallium nitride , template , laser , optics , nanotechnology , chemistry , layer (electronics) , physics , astronomy
This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi‐polar (11 2 2) and non‐polar (1 1 00) surfaces. Specific features of semi‐polar InGaN/GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum‐well‐based light emitting devices. The analysis favours semi‐polar surfaces such as the (11 2 2) surface as growth plane for long‐wavelength light emitters. Therefore, the experimental sections emphasize progress towards long‐wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(11 2 2) heterostructures on large‐area GaN(11 2 2)/m‐sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.