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Characterization of AlGaInN layers using X‐ray diffraction and fluorescence
Author(s) -
Groh Lars,
Hums Christoph,
Bläsing Jürgen,
Krost Alois,
Dadgar Armin
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046418
Subject(s) - diffraction , characterization (materials science) , polarization (electrochemistry) , nitride , quantum , quantum confined stark effect , materials science , light emitting diode , wide bandgap semiconductor , optics , optoelectronics , condensed matter physics , physics , chemistry , quantum well , nanotechnology , quantum mechanics , laser , layer (electronics)
Quantum well structures for nitride‐based LEDs are mainly grown in c‐direction, whereby the quantum confined Stark‐effect (QCSE) reduces the overlap of the electron and hole wave function and with it the internal quantum efficiency. The reason for that is the difference in polarization of the quantum well and barrier materials. In order to balance these polarizations, quaternary (AlGaIn)N layers for the later use as barrier material have been grown. In addition to the bandgap energy, another parameter, the polarization, can be controlled in this way. As a standard characterization method X‐ray diffraction measurements have been performed. Due to the impossibility of fully determining the composition using this method, total reflection X‐ray‐fluorescence (TXRF) has been used to get the missing information.