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Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates
Author(s) -
Schwaiger Stephan,
Metzner Sebastian,
Wunderer Thomas,
Argut Ilona,
Thalmair Johannes,
Lipski Frank,
Wieneke Matthias,
Bläsing Jürgen,
Bertram Frank,
Zweck Josef,
Krost Alois,
Christen Jürgen,
Scholz Ferdinand
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046336
Subject(s) - cathodoluminescence , coalescence (physics) , materials science , sapphire , diffraction , transmission electron microscopy , planar , optoelectronics , silicon , scanning electron microscope , substrate (aquarium) , crystallography , optics , composite material , nanotechnology , laser , chemistry , luminescence , physics , computer graphics (images) , astrobiology , computer science , oceanography , geology
Semipolar $(11{\bar {2}}2)$ oriented GaN has been grown on a pre‐structured r‐plane sapphire substrate. By using silicon doped marker layers (MLs) we have been able to monitor the growth evolution of the stripes until coalescence. With that technique we correlated the growth type (direction) with the results of cathodoluminescence (CL) and transmission electron microscopy. Both characterization methods show only a few defects for the major part of the structure and a relatively high defect density for material grown in a‐direction at one side of the stripes. It is shown that during coalescence these defects are mainly terminated resulting in a flat, planar $(11{\bar {2}}2)$ GaN layer with strongly reduced defect density. Additionally, X‐ray diffraction (XRD) measurements show the high quality of these layers.