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Polarization switching of the optical gain in semipolar InGaN quantum wells
Author(s) -
Scheibenzuber W. G.,
Schwarz U. T.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046262
Subject(s) - quantum well , indium , polarization (electrochemistry) , materials science , optoelectronics , valence band , valence (chemistry) , optics , condensed matter physics , physics , band gap , chemistry , laser , quantum mechanics
We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self‐consistent 6 × 6 k · p ‐band structure calculations. The semipolar planes considered here are the $(11\bar {2}2)$ ‐ and the $(20\bar {2}1)$ ‐plane. In contrast to the $(20\bar {2}1)$ ‐plane, the dominant polarization of the optical gain in a QW on the $(11\bar {2}2)$ ‐plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW.