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Reactions on the SiC(0001) √3 × √3 R30° surface after Ti deposition and annealing
Author(s) -
Johansson L. I.,
Virojanadara C.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046175
Subject(s) - annealing (glass) , ternary operation , materials science , analytical chemistry (journal) , spectral line , crystallography , chemistry , metallurgy , physics , astronomy , computer science , programming language , chromatography
The interactions of thin Ti layers deposited on the SiC(0001) √3 × √3 R30° surface at room temperature and after annealing at temperatures from 450 to 1200 °C was investigated using photoemission and LEED. Chemically shifted components were revealed in the Si 2p spectrum and found to be more intense and pronounced than the shifted component in the C 1s spectrum after Ti deposition and annealing. The relative intensity of these shifted components were found to increase initially upon annealing at temperatures up to around 700 °C. At temperatures above 800 °C only the shifted component in the C 1s spectrum remained which indicate that only TiC then remains on the surface. At annealing temperatures of 600–700 °C formation of the ternary Ti 3 SiC 2 phase and an interface TiSi x layer is suggested from shifts and relative intensities observed for these components. That the formation and decomposition of the ternary phase occurs at a considerably lower temperature than earlier reported is attributed to the fact that we investigated the interaction of considerably thinner Ti layers with SiC substrates than in those earlier reported studies.