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Recombination activity of iron–boron pairs in compensated p‐type silicon
Author(s) -
Macdonald Daniel,
Liu An
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201046157
Subject(s) - boron , acceptor , silicon , recombination , oxygen , materials science , wafer , carrier lifetime , crystallography , chemistry , chemical physics , analytical chemistry (journal) , nanotechnology , optoelectronics , condensed matter physics , physics , biochemistry , organic chemistry , chromatography , gene
Recently, the possible presence of boron–phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron–oxygen defects in this material. These B–P pairs should also lead to an altered recombination activity of Fe‐acceptor pairs in compensated Si, since some of the Fe‐acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe‐implanted compensated Si wafers, containing both B and P, to identify the Fe‐acceptor complexes present. The results indicate that FeB pairs dominate these samples, implying that Fe–B–P complexes, and by extension, B–P pairs, are unlikely to be present in significant concentrations.