Premium
Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
Author(s) -
LawniczakJablonska K.,
Libera J.,
Wolska A.,
Klepka M. T.,
Dluzewski P.,
BakMisiuk J.,
Dynowska E.,
Romanowski P.,
Domagala J. Z.,
Sadowski J.,
Barcz A.,
Wasik D.,
Twardowski A.,
Kwiatkowski A.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201001187
Subject(s) - annealing (glass) , materials science , hexagonal crystal system , condensed matter physics , magnetic semiconductor , crystallography , chemistry , semiconductor , metallurgy , optoelectronics , physics
Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga 0.92 Mn 0.08 As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 °C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample.