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Electrical properties of polycrystalline CaB 6 under high pressure and low temperature
Author(s) -
Li Yan,
Yang Jie,
Cui Xiaoyan,
Hu Tingjing,
Liu Cailong,
Tian Yongjun,
Liu Hongwu,
Han Yonghao,
Gao Chunxiao
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201001106
Subject(s) - hall effect , materials science , electrical resistivity and conductivity , temperature coefficient , diamond anvil cell , crystallite , grain boundary , pressure coefficient , metal , high pressure , diamond , analytical chemistry (journal) , composite material , condensed matter physics , mineralogy , metallurgy , electrical engineering , engineering physics , chemistry , thermodynamics , microstructure , physics , chromatography , engineering
Carrier behavior of CaB 6 powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB 6 has a typical metallic behavior under high pressure.