Premium
Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires
Author(s) -
Andrearczyk Tomasz,
Wosinski Tadeusz,
Figielski Tadeusz,
Makosa Andrzej,
Krogulec Iwona,
Wróbel Jerzy,
Sadowski Janusz
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201001099
Subject(s) - nanowire , magnetoresistance , condensed matter physics , materials science , ferromagnetism , electron beam lithography , hysteresis , electrical resistivity and conductivity , magnetic field , anisotropy , nanostructure , nanotechnology , resist , layer (electronics) , physics , optics , quantum mechanics
Cross‐like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron‐beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga,Mn)As epitaxial layer were studied. Electrical resistance of individual nanowires as a function of applied magnetic field were investigated at low temperatures. Low‐field magnetoresistance (MR) of the nanowires exhibits hysteresis‐like behaviour and related remnant resistance in zero magnetic field. These effects are explained in terms of magnetic domain walls (DWs) pinned at the wires intersection, which contribute to the wire resistance. The DW resistivity, which depends on the degree of spin misalignment in the wall, has been determined to be of the order of 1 Ω µm 2 . High‐field MR has, in turn, allowed determining the lithography‐induced anisotropy field for the nanowires of different crystallographic orientations.