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Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green
Author(s) -
Mutta G. R.,
Ruterana P.,
Doualan J. L.,
Chauvat M. P.,
Ivaldi F.,
Kret S.,
Kaufmann N. A. K.,
Dussaigne A.,
Martin D.,
Grandjean N.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000801
Subject(s) - metalorganic vapour phase epitaxy , indium , molecular beam epitaxy , photoluminescence , quantum well , materials science , epitaxy , wavelength , optoelectronics , transmission electron microscopy , analytical chemistry (journal) , chemistry , optics , nanotechnology , physics , laser , environmental chemistry , layer (electronics)
Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree with the indium local composition as extracted from strain measurements and with the well width. As could be expected, the data is at small variance with the nominal values as set during growth, but the general trends are similar.